参数
| 点群 | 32 |
| 空间群 | P32I |
| 电阻率 | 4.0×1012Ω/cm-1 |
| 厚度 | 0.13-0.5mm |
| 直径 | 50mm |
| 长度 | 90-100mm |
| 熔点 | 1470℃ |
| 密度 | 5.67g/cm3 |
| 莫氏硬度 | 5.5 |
| 热膨胀系数 | aa=16×10-6/K, ac=4×10-6/K |
| 光损伤阈值 | 670MV/cm2 |
| 晶胞参数 | a=b=0.8162nm,c=0.5087nm |
| 介电常数 | ε11=18.27 |
| ε33=55.26 | |
| 电光系数 | γ11=2.3×10-12m/V |
| γ33=1.8×10-12m/V | |
| 压电应变常数（10-12）C / N | d11=6.3 |
| d14=-5.4 | |
| 相速度，m / s | 2750～2850 |
| 机电耦合系数，K [％] | 0.28～0.46 |
| 溶解度 | 无 |
| 热膨胀系数 | α11=5.15×10-6K-1 |
| α33=3.65×10-6K-1 |
| 最大工作频率 | 50KHz |
| 最大输出功率 | 7.5W |
| 脉宽 | 46ns |
| 能量输出-40℃ | 155mJ |
| 能量输出+ 50℃ | 163mJ |
| 室温能量输出 | 167mJ |
| 电光转换效率 | 1.26% |
| 属性 | ||||
| 石英 | LGS | Li2B4O7 | LiTaO3 | |
| 机电耦合系数K，％（BAW） | 7 | 15.8 | 24 | 47 |
| 频率间隔Δf，％ | 0.25 | 0.9 | 4 | 7 |
| Q-因子Q,×103 | 100 | 50 | 10 | 2 |
| 温度频率系数TFC，×10-6 /℃ | 0.5 | 1.6 | 6 | 4 |
| 晶体 | 石英 | LGS |
| 属性 | ||
| 密度, g/cm³ | 2.65 | 5.746 |
| SAW速度 Vef，m / s | (0°, 132.75°, 0°) | (0°, 140°, 25°) |
| 3157 | 2756 | |
| 机电耦合系数K2emc，％（SAW） | 0.14 | 0.36 |
| 二阶温度 系数α2，×10-8/ /℃ | -3.2 | -6.8 |
| 温度 Coef。 TTO，℃ | 25 | 23 |
| 介电常数e | 4.92 | 27 |
| 能流角 , ° | 0 | 0.5 |
| 常数 | 相对介电常数 | 压电常数（pC / N） | 弹性刚度（1011 Pa） | |||||||
| ε11 | ε33 | d11 | d14 | c11 | c12 | c13 | c14 | C33 | C44 | |
| 数值 | 18.96 | 50.19 | 5.66 | -5.48 | 1.898 | 1.058 | 1.022 | 0.144 | 2.626 | 0.535 |
| 一阶温度。系数（10-6·K-1） | 150 | -760 | 329 | -342 | -66 | 204 | -75 | -335 | -94 | -63 |
- 高损伤阈值
- 良好的旋光度
- 可以承受高低温变化
- 稳定的理化特性
- 机电耦合系数高（是石英的3倍）
- 低等效串联电阻
- 光电Q开关
- SAW装置
- BAW装置
- 传感器
- 大功率高重复率全固态激光器
- 高低温变激光
[1] Yao, Tiankai, Lu, et al. Radiation-induced amorphization of Langasite La3Ga5SiO14[J]. Journal of Nuclear Materials: Materials Aspects of Fission and Fusion, 2018.
[2] Alyabyeva L , Burkov V , Mill B . Optical spectroscopy of La3Ga5SiO14 disordered crystals doped with Fe3+ ions[J]. Optical Materials, 2015, 43:55-58.
[3] Bj?Rheim T S , Haugsrud R , Norby T . Protons in acceptor doped langasite, La3Ga5SiO14[J]. Solid State Ionics, 2014, 264:76-84.
[4] Futami Y , Yanagida T , Fujimoto Y , et al. Photoluminescence and scintillation of LGS (La3Ga5SiO14), LNGA (La3Nb0.5Ga5.3Al0.2O14) and LTGA (La3Ta0.5Ga5.3Al0.2O14) single crystals[J]. Optical Materials, 2012, 34(9):1513-1516.
[5] Wang B , Wei A , Qi H , et al. Optical activity and acoustic properties of La3Ga5SiO14[J]. Materials Chemistry and Physics, 2006, 97(1):200–202.
[6] Takeda H , Shimamura K , Chani V I . Effect of starting melt composition on crystal growth of La3Ga5SiO14[J]. Journal of Crystal Growth, 1999, 197(1/2):204-209.
[7] CRYSTAL GROWTH AND CHARACTERIZATION OF LA_3GA_5SIO_(14) SINGLE CRYSTALS[C]// Abstracts of Iumrs International Conference on Electronic Materials Iumrs-icem. 2002.
[8] Jung I H , Auh K H . Crystal growth and piezoelectric properties of langasite (La3Ga5SiO14) crystals[J]. Materials Letters, 1999, 41(5):241-246.
[9] Kim Y S , Auh K H . Tm-doped Langasite (La3Ga5SiO14) crystals grown by the Czochralski method for optical applications[J]. Materials Letters, 2002, 57(1):28-31.
[10] Wang Z , Yin Y , Yuan D . Optical transitions in Ho3+ doped La3Ga5SiO14 crystals[J]. Journal of Alloys and Compounds, 2007, 436(1-2):364-368.
[11] Turcu F , Simon S , Constantinescu S , et al. Structural changes of piezoelectric La3Ga5SiO14 induced by paramagnetic ions revealed by Ga-71 multiple quantum magic angle spinning[J]. Solid State Nuclear Magnetic Resonance, 2009, 36(2):92-95.
[12] Ansorge E , Schimpf S , Hirsch S , et al. Piezoelectric driven resonant beam array in langasite (La3Ga5SiO14)[J]. Sensors and Actuators A Physical, 2006, 132(1):271-277.
[13] Aramburu I , Iparraguirre I , Illarramendi M A , et al. Self-tuning in birefringent La3Ga5SiO14:Nd3+ laser crystal[J]. Optical Materials, 2005, 27(11):1692-1696.
[14] Jung I H , Shim K B , Auh K H , et al. The defect distribution and chemical etching of Langasite (La3Ga5SiO14) crystals grown by the Czochralski method[J]. Materials Letters, 2000, 46(6):354-357.
[15] Mytsyk B G , Demyanyshyn N M , Andrushchak A S , et al. Piezooptical coefficients of La 3Ga 5SiO 14 and CaWO 4 crystals: A combined optical interferometry and polarization-optical study[J]. Optical Materials, 2011, 33(1):26-30.
[16] Rane G K , Menzel S , Seifert M , et al. Tungsten/molybdenum thin films for application as interdigital transducers on high temperature stable piezoelectric substrates La3Ga5SiO14 and Ca3TaGa3Si2O14[J]. Materials Science and Engineering B, 2015, 202(DEC.):31-38.
[17] Shimamura K , Takeda H , Kohno T , et al. Growth and characterization of lanthanum gallium silicate La 3Ga 5SiO 14 single crystals for piezoelectric applications[J]. Journal of Crystal Growth, 1996, 163(4):388-392.
[18] Jiyang, Wang, and, et al. Growth, properties and electrooptical applications of single crystal La3Ga5SiO14[J]. Optical Materials, 2003.
[19] Zhang S , Tian Z , Wang Q , et al. Optimal length of an electro-optical Q-switch with optical activity crystal La 3Ga 5SiO 14[J]. Optics & Laser Technology, 2007, 39(3):507-509.
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